Role of spin-orbit coupling and hybridization effects in the electronic structure of ultrathin Bi films

被引:281
作者
Hirahara, T.
Nagao, T.
Matsuda, I.
Bihlmayer, G.
Chulkov, E. V.
Koroteev, Yu. M.
Echenique, P. M.
Saito, M.
Hasegawa, S.
机构
[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[2] Natl Inst Mat Sci, Nano Syst Funct Ctr, Tsukuba, Ibaraki 3050044, Japan
[3] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[4] DIPC, San Sebastian 20018, Spain
[5] UPV, EHU, Dept Fis Mat, San Sebastian 20080, Spain
[6] RAS, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[7] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9201192, Japan
关键词
D O I
10.1103/PhysRevLett.97.146803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic structure of Bi(001) ultrathin films (thickness >= 7 bilayers) on Si(111)-7x7 was studied by angle-resolved photoemission spectroscopy and first-principles calculations. In contrast with the semimetallic nature of bulk Bi, both the experiment and theory demonstrate the metallic character of the films with the Fermi surface formed by spin-orbit-split surface states (SSs) showing little thickness dependence. Below the Fermi level, we clearly detected quantum well states (QWSs) at the M ($) over bar point, which were surprisingly found to be non-spin-orbit split; the films are "electronically symmetric" despite the obvious structural nonequivalence of the top and bottom interfaces. We found that the SSs hybridize with the QWSs near M ($) over bar and lose their spin-orbit-split character.
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页数:4
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