Piezoelectric fields in GaInN/GaN quantum wells on different crystal facets

被引：59

作者：

Feneberg, M. ^{[1
]}

Lipski, F.

Sauer, R.

Thonke, K.

Wunderer, T.

Neubert, B.

Brueckner, P.

Scholz, F.

机构：

[1] Univ Ulm, Inst Halbleiterphys, D-89069 Ulm, Germany

[2] Univ Ulm, Inst Optoelect, D-89069 Ulm, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 24期

关键词：

SEMICONDUCTORS;

D O I：

10.1063/1.2405866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direction and strength of piezoelectric built-in fields of GaInN quantum wells have been experimentally determined. The quantum wells have been grown either on the conventional {0001} crystal plane of GaN or on {1101} facets of selectively grown GaN stripes. The emission peak position of the electric-field-dependent photoluminescence can be modeled and yields value and sign of the piezoelectric field dependent on the strain of the quantum wells. On the semipolar {1101} facets, the quantum wells show a much weaker field (-0.1 MV/cm) compared to quantum wells grown on polar {0001} planes (-1.9 MV/cm), consistent with theoretic predictions. (c) 2006 American Institute of Physics.

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页数：3

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共 14 条

[1] Optical evidence for lack of polarization in (1120) oriented GaN/(AlGa)N quantum structures [J].

Akopian, N ;

Bahir, G ;

Gershoni, D ;

Craven, MD ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3

[2] Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures [J].

Ambacher, O ;

Majewski, J ;

Miskys, C ;

Link, A ;

Hermann, M ;

Eickhoff, M ;

Stutzmann, M ;

Bernardini, F ;

Fiorentini, V ;

Tilak, V ;

Schaff, B ;

Eastman, LF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3399-3434

[3] First-principles calculation of the piezoelectric tensor (d)over-left-right-arrow of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V .

APPLIED PHYSICS LETTERS, 2002, 80 (22) :4145-4147

[4] Determination of the piezoelectric field in InGaN quantum wells [J].

Brown, IH ;

Pope, IA ;

Smowton, PM ;

Blood, P ;

Thomson, JD ;

Chow, WW ;

Bour, DP ;

Kneissl, M .

APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3

[5] Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers [J].

Bulashevich, K. A. ;

Karpov, S. Yu. ;

Suris, R. A. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07) :1625-1629

[6] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells [J].

Im, JS ;

Kollmer, H ;

Off, J ;

Sohmer, A ;

Scholz, F ;

Hangleiter, A .

PHYSICAL REVIEW B, 1998, 57 (16) :R9435-R9438

[7] Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells [J].

Jho, YD ;

Yahng, JS ;

Oh, E ;

Kim, DS .

APPLIED PHYSICS LETTERS, 2001, 79 (08) :1130-1132

[8] GaInN quantum wells grown on facets of selectively grown GaN stripes -: art. no. 182111 [J].

Neubert, B ;

Brückner, P ;

Habel, F ;

Scholz, F ;

Riemann, T ;

Christen, J ;

Beer, M ;

Zweck, J .

APPLIED PHYSICS LETTERS, 2005, 87 (18) :1-3

[9] Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors [J].

Park, SH ;

Chuang, SL .

PHYSICAL REVIEW B, 1999, 59 (07) :4725-4737

[10] Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells [J].

Takeuchi, T ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (2A) :413-416