Microstructure and grain growth of polycrystalline silicon grown in fluidized bed reactors

被引:29
作者
Dahl, M. M. [1 ]
Bellou, A. [1 ]
Bahr, D. F. [1 ]
Norton, M. G. [1 ]
Osborne, E. W. [2 ]
机构
[1] Washington State Univ, Sch Mech & Mat Engn, Pullman, WA 99164 USA
[2] REC Silicon, Moses Lake, WA 98837 USA
关键词
Characterization; Polysilicon; Solar cells; THEORETICAL-ANALYSIS; SILANE;
D O I
10.1016/j.jcrysgro.2009.01.114
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Fluidized bed technology is being implemented commercially to produce polycrystalline silicon that is used as a precursor for silicon ingot growth for the photovoltaic industry. The fluidized bed reactor produces polysilicon in a granular form, usually at lower temperatures than the traditional Siemens process. This current study documents for the first time grain growth and mechanical properties of polysilicon grown via a fluidized bed. In the as-grown state the granules produced by the fluidized bed reactor consist of equiaxed grains that are approximately 30 nm in diameter. Annealing at temperatures above 1000 degrees C causes significant grain growth to occur resulting in grains up to 300 nm. The hardness of the granular material was 10% less than that of single crystal silicon, which can be attributed to grain boundary sliding. Understanding the effect of annealing on microstructure, grain growth, and mechanical properties of the granules is critical for establishing appropriate techniques for handling the material. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1496 / 1500
页数:5
相关论文
共 15 条
[1]   Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices [J].
Bhushan, B ;
Li, XD .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (01) :54-63
[2]  
Borodulya VA, 2005, J ENG PHYS THERMOPH+, V78, P47, DOI 10.1007/s10891-005-0028-3
[3]   Fracture of polycrystalline silicon [J].
Brodie, RC ;
Bahr, DF .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2003, 351 (1-2) :166-173
[4]   SILICON DEPOSITION FROM SILANE OR DISILANE IN A FLUIDIZED-BED .2. THEORETICAL-ANALYSIS AND MODELING [J].
CAUSSAT, B ;
HEMATI, M ;
COUDERC, JP .
CHEMICAL ENGINEERING SCIENCE, 1995, 50 (22) :3625-3635
[5]   Chemical vapor deposition model of polysilicon in a trichlorosilane and hydrogen system [J].
del Coso, G. ;
del Canizo, C. ;
Luque, A. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (06) :D485-D491
[6]   Grain growth and mechanical properties in bulk polycrystalline silicon [J].
Fancher, RW ;
Watkins, CM ;
Norton, MG ;
Bahr, DF ;
Osborne, EW .
JOURNAL OF MATERIALS SCIENCE, 2001, 36 (22) :5441-5446
[7]   FINES IN FLUIDIZED-BED SILANE PYROLYSIS [J].
HSU, G ;
HOGLE, R ;
ROHATGI, N ;
MORRISON, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) :660-663
[8]   HETEROGENEOUS DECOMPOSITION OF SILANE IN A FIXED-BED REACTOR [J].
IYA, SK ;
FLAGELLA, RN ;
DIPAOLO, FS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1531-1535
[9]   KINETICS OF GRAIN-GROWTH IN DOPED POLYCRYSTALLINE SILICON THIN-FILMS [J].
KALAINATHAN, S ;
DHANASEKARAN, R ;
RAMASAMY, P .
THIN SOLID FILMS, 1988, 163 :383-386
[10]   ON A TEST OF WHETHER ONE OF 2 RANDOM VARIABLES IS STOCHASTICALLY LARGER THAN THE OTHER [J].
MANN, HB ;
WHITNEY, DR .
ANNALS OF MATHEMATICAL STATISTICS, 1947, 18 (01) :50-60