A reliable lifetime prediction in deep submicron N-channel SOI MOSFETs

被引:3
作者
Renn, SH
Pelloie, JL
Balestra, F
机构
[1] LETI, 38041 Grenoble Cedex 9, 17, rue des Martyrs
[2] Lab. Phys. Composants S., ENSERG/INPG, 38016 Grenoble Cedex 1, 23, rue des Martyrs
关键词
D O I
10.1016/S0167-9317(97)00024-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hot carrier effects are thoroughly investigated in deep submiron N-channel SOI MOSFETs, for gate lengths from 0.4 mu m down to 0.1 mu m. The hot-carrier-induced device degradations are analyzed with systematic stress experiments in the maximum substrate current condition (Vg approximate to Vd/2), where the most severe device aging is observed in the low drain bias range. A two-stage hot-carrier degradation is clearly observed for all the experimental conditions. A quasi-identical threshold value between the power time-dependent law and the logarithmic time-dependent law is also highlighted for all the stress drain biases for a given channel length. These new findings allow us to propose a reliable method for lifetime prediction using accurate time-dependent laws in a wide gate length range.
引用
收藏
页码:99 / 102
页数:4
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