AN ANALYTICAL MODEL FOR SELF-LIMITING BEHAVIOR OF HOT-CARRIER DEGRADATION IN 0.25-MU-M N-MOSFETS

被引：26

作者：

LIANG, CL

GAW, H

CHENG, P

机构：

[1] Intel Corporation, Santa Clara, CA

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 11期

关键词：

D O I：

10.1109/55.192843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier degradation of short-channel n-MOSFET's becomes saturated after reaching a certain threshold value. The physical mechanism for this self-limiting behavior has been investigated. It is proposed that the hot-carrier-induced oxide trapped charge and interface states form a potential barrier that repels subsequent hot carriers from causing further damage and can lead to the saturation of device degradation. A physical model has been developed based on the analysis. The model has been verified by experimental results and can be used for more accurate device reliability projection.

引用

页码：569 / 571

页数：3

共 9 条

[1]

CHAM KM, 1987, P IEEE RELIABILITY P, P11

[2] DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING [J].