Terahertz emission. by plasma waves in 60 nm gate high electron mobility transistors

被引：299

作者：

Knap, W ^{[2
]}

Lusakowski, J

Parenty, T

Bollaert, S

Cappy, A

Popov, VV

Shur, MS

机构：

[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[2] Univ Montpellier 2, GES, CNRS, F-34900 Montpellier, France

[3] CNRS, IEMN DHS, UMR 8520, F-59652 Villeneuve Dascq, France

[4] Russian Acad Sci, Inst Radioengn & Elect, Saratov 410019, Russia

[5] Rensselaer Polytech Inst, Ctr Broadband Data Transport, Troy, NY 12180 USA

[6] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 13期

关键词：

D O I：

10.1063/1.1689401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the resonant, voltage tunable emission of terahertz, radiation (0.4-1.0 THz) from a gated two; dimensional electron gas in a 60 nm InGaAs high electron mobility transistor. The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov-Shur instability). (C) 2004 American Institute of Physics.

引用

页码：2331 / 2333

页数：3

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