Optical gain in monodispersed silicon nanocrystals

被引:69
作者
Cazzanelli, M
Navarro-Urriós, D
Riboli, F
Daldosso, N
Pavesi, L
Heitmann, J
Yi, LX
Scholz, R
Zacharias, M
Gösele, U
机构
[1] Univ Trent, Dipartimento Fis, INFM, I-38050 Trento, Italy
[2] Max Planck Inst, Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany
关键词
D O I
10.1063/1.1781770
中图分类号
O59 [应用物理学];
学科分类号
摘要
Stimulated emission from silicon-nanocrystal planar waveguides grown via phase separation and thermal crystallization of SiO/SiO2 superlattices is presented. Under high power pulsed excitation, positive optical gain can be observed once a good optical confinement in the waveguide is achieved and the silicon nanocrystals have proper size. A critical tradeoff between Auger nonradiative recombination processes and stimulated emission is observed. The measured large gain values are explained by the small size dispersion in these silicon nanocrystals. (C) 2004 American Institute of Physics.
引用
收藏
页码:3164 / 3171
页数:8
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