First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

被引：52

作者：

Camjayi, A. ^{[1
,2
]}

Acha, C. ^{[1
,2
]}

Weht, R. ^{[3
,4
]}

Rodriguez, M. G. ^{[1
,2
]}

Corraze, B. ^{[5
]}

Janod, E. ^{[5
]}

Cario, L. ^{[5
]}

Rozenberg, M. J. ^{[6
]}

机构：

[1] UBA, FCEN, Dept Fis, RA-1428 Buenos Aires, DF, Argentina

[2] Consejo Nacl Invest Cient & Tecn, IFIBA, RA-1428 Buenos Aires, DF, Argentina

[3] CNEA, RA-1650 San Martin, Argentina

[4] Univ Nacl San Martin, CNEA, Inst Sabato, RA-1650 San Martin, Argentina

[5] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes, France

[6] Univ Paris 11, CNRS, Lab Phys Solides, UMR8502, F-91405 Orsay, France

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 113卷 / 08期

关键词：

ELECTRONIC-STRUCTURE; TETRAHEDRAL CLUSTER; WANNIER FUNCTIONS; V2O3; SUPERCONDUCTIVITY; MOLYBDENUM; CRYSTAL; GAV4S8;

D O I：

10.1103/PhysRevLett.113.086404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The nature of the Mott transition in the absence of any symmetry breaking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.

引用

页数：5

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