Formation of mechanically strong low-k film using supercritical fluid dry technology

被引：16

作者：

Ogawa, S ^{[1
]}

Takashi, N ^{[1
]}

Egami, M ^{[1
]}

Nakashima, A ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Adv Technol Res Dept, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Supercritical fluid (SCF) dry technology has been applied into formation of a porous low-k film for the first time. The SFC treatment was used to extract templates chemically from the low-k film, which form nm-scale pores, without any gelation of the framework followed by curing anneal. Results showed that the SCF treatment brought smaller pore size with higher mechanical properties at lower cure temperature of 350 degrees C.

引用

页码：220 / 222

页数：3

共 7 条

[1] DIELECTRIC-PROPERTIES OF AEROGELS [J].

HRUBESH, LW ;

KEENE, LE ;

LATORRE, VR .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (07) :1736-1741

[2] Line width dependence of copper resistivity [J].

Jiang, QT ;

Tsai, MH ;

Havemann, RH .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :227-229

[3]

KUAN TS, 2001, MAT RES SOC S PRPC, V612

[4] Low-k dielectrics characterization for Damascene integration [J].

Lin, S ;

Jin, CM ;

Lui, L ;

Tsai, MS ;

Daniels, M ;

Gonzalez, A ;

Wetzel, JT ;

Monnig, KA ;

Winebarger, PA ;

Jang, S ;

Yu, D ;

Liang, MS .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :146-148

[5] Film properties of low-density and ultra-low-dielectric-constant material [J].

Muraguchi, R ;

Egami, M ;

Arao, H ;

Tounai, A ;

Nakashima, A ;

Komatsu, M .

LOW-DIELECTRIC CONSTANT MATERIALS V, 1999, 565 :63-68

[6] Free-standing and oriented mesoporous silica films grown at the air-water interface [J].

Yang, H ;

Coombs, N ;

Sokolov, I ;

Ozin, GA .

NATURE, 1996, 381 (6583) :589-592

[7]

IN PRESS ITRS 2001

← 1 →