Time-dependent-dielectric-breakdown measurements of thermal oxides on N-type 6H-SiC

被引：83

作者：

Maranowski, MM ^{[1
]}

Cooper, JA

机构：

[1] Hewlett Packard Corp, San Jose, CA 95131 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 03期

关键词：

MOS devices; reliability; semiconductor-insulator interfaces;

D O I：

10.1109/16.748871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-dependent-dielectric-breakdown (TDDB) measurements are reported on n-type 6H-SiC ROS capacitors formed br thermal oxidation, Failure distributions are obtained at 145, 240, and 305 degrees C, and intrinsic mean-time-to-failure (MTTF) is plotted as a function of oxide field at each temperature. The results indicate that oxide reliability will not be a significant limitation to MOS-based power switching devices at temperatures up to 150 degrees C, However, long-term operation of SIC MOS devices at temperatures higher than 250 degrees C may not be practical.

引用

页码：520 / 524

页数：5

共 18 条

[1] 1400V 4H-SiC power MOSFETs [J].