Magnetotransport properties of (Ga, Mn)Sb

被引：69

作者：

Matsukura, F ^{[1
]}

Abe, E ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The preparation of dilute alloy of GaSb and Mn, (Ga, Mn)Sb, with a few percent of Mn by molecular beam epitaxy and its magnetotransport properties are reported. Magnetotransport measurements show a pronounced anomalous Hall effect and negative magnetoresistance below 50 K. The results suggest that Mn atoms are incorporated in the GaSb host, resulting in the formation of the ferromagnetic semiconductor, (Ga, Mn)Sb. (C) 2000 American Institute of Physics. [S0021-8979(00)91908-X].

引用

页码：6442 / 6444

页数：3

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