Study of reaction process on Ni/4H-SiC contact

被引:25
作者
Cao, Y. [1 ]
Nyborg, L.
Yi, D. -Q.
Jelvestam, U.
机构
[1] Chalmers, Dept Mat & Mfg Technol, SE-41296 Gothenburg, Sweden
[2] Cent S Univ, Sch Mat Sci & Engn, Changsha 410083, Peoples R China
关键词
silicon carbide; metal contact; interfacial reaction;
D O I
10.1179/174328406X118276
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present study deals with mechanisms of the reaction process of fabricated thin film Ni/SiC contacts by means of XRD, XPS and Raman spectroscopy. After annealing SiC samples sputter coated with Ni at 800 and 950 degrees C in vacuum for 20 min, the dominant silicide is textured Ni2Si. Its formation consists of two stages: initial reaction rate and subsequent diffusion controlled stage. For ultra thin initial Ni layer (similar to 3-6 nm), islands formation of Ni2Si is observed after heat treatment. Increasing the Ni film thickness prevents this phenomenon. The C released owing to the Ni2Si formation reaction forms a thin graphite layer on the top of the surface and also tends to form cluster inside the reaction layer. The overall degree of graphitisation is higher at 950 degrees C than that at 800 degrees C.
引用
收藏
页码:1227 / 1234
页数:8
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