Response to "Comment on 'Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells' " [Appl. Phys. Lett. 81, 3100 (2002)]

被引：2

作者：

Cho, HK

Lee, JY

Sharma, N

Humphreys, CJ

Yang, GM

Kim, CS

Song, JH

Yu, PW

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[3] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea

[4] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea

[5] Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期

关键词：

D O I：

10.1063/1.1515887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3102 / 3103

页数：2

共 9 条

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