Nanoindentation on AlGaN thin films

被引:56
作者
Cáceres, D
Vergara, I
González, R
Monroy, E
Calle, F
Muñoz, E
Omnès, F
机构
[1] Univ Carlos III Madrid, Escuela Politecn Super, Dept Fis, Madrid 28911, Spain
[2] Polytech Univ, ETSI Telecommun, Dept Ingn Elect, Madrid 28040, Spain
[3] CNRS, CRHEA, F-06560 Valbonne, France
关键词
D O I
10.1063/1.371726
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hardness and Young's modulus were measured in AlGaN thin films with different Al content, using a nanoindentation technique. Hardness slightly decreases with increasing Al content, ranging from 20.2 to 19.5 GPa for Al content from 0.09 to 0.27, respectively. No significant variations of Young's modulus were observed. The resulting value of Young's modulus is 375 GPa. Discontinuities in load-displacement curves were found, which are associated with dislocation nucleation. The threshold load for this discontinuity depends on the conditions of the nanoindentation test. Below the threshold load, the sample surface flexes elastically in response to the indenter contact and the displacements recover completely when the sample is unloaded. (C) 1999 American Institute of Physics. [S0021-8979(99)06224-6].
引用
收藏
页码:6773 / 6778
页数:6
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共 22 条
  • [1] A method for interpreting the data from depth-sensing indentation instruments
    Doerner, M. F.
    Nix, W. D.
    [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (04) : 601 - 609
  • [2] ELASTIC CONTACT VERSUS INDENTATION MODELING OF MULTILAYERED MATERIALS
    GAO, HJ
    CHIU, CH
    LEE, J
    [J]. INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 1992, 29 (20) : 2471 - 2492
  • [3] A KINEMATIC MODEL FOR PLASTIC INDENTATION OF A BILAYER
    LEBOUVIER, D
    GILORMINI, P
    FELDER, E
    [J]. THIN SOLID FILMS, 1989, 172 (02) : 227 - 239
  • [4] Elastic field of a thin-film/substrate system under an axisymmetric loading
    Li, J
    Chou, TW
    [J]. INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 1997, 34 (35-36) : 4463 - 4478
  • [5] An investigation of thin-film coating/substrate systems by nanoindentation
    Li, J
    Thostenson, ET
    Chou, TW
    Riester, L
    [J]. JOURNAL OF ENGINEERING MATERIALS AND TECHNOLOGY-TRANSACTIONS OF THE ASME, 1998, 120 (02): : 154 - 162
  • [6] Determination of elastic modulus of thin layers using nanoindentation
    Mencik, J
    Munz, D
    Quandt, E
    Weppelmann, ER
    Swain, MV
    [J]. JOURNAL OF MATERIALS RESEARCH, 1997, 12 (09) : 2475 - 2484
  • [7] EMERGING GALLIUM NITRIDE BASED DEVICES
    MOHAMMAD, SN
    SALVADOR, AA
    MORKOC, H
    [J]. PROCEEDINGS OF THE IEEE, 1995, 83 (10) : 1306 - 1355
  • [8] AlGaN metal-semiconductor-metal photodiodes
    Monroy, E
    Calle, F
    Muñoz, E
    Omnès, F
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3401 - 3403
  • [9] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
    NAKAMURA, S
    MUKAI, T
    SENOH, M
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (13) : 1687 - 1689
  • [10] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
    Nakamura, S
    Senoh, M
    Nagahama, S
    Iwasa, N
    Yamada, T
    Matsushita, T
    Sugimoto, Y
    Kiyoku, H
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4056 - 4058