Insight into the suppressed recovery of NBTI-stressed ultrathin oxynitride gate pMOSFET

被引：9

作者：

Ang, D. S. ^{[1
]}

Wang, S. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 09期

关键词：

charge pumping (CP) current; dynamic or ac stress; hole trapping; negative-bias temperature instability (NBTI); nitrided oxide; oxynitride;

D O I：

10.1109/LED.2006.880841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been observed that the ultrathin oxynitride gate pMOSFET is resistant to post-negative-bias-temperature-instability (post-NBTI) recovery. The resistance to recovery is due mainly to the locking in of stress-induced positive interfacial/bulk oxide defects at deep energy levels (above the conduction band edge of the Si n-well) outside the energy window of electron direct tunneling. As a consequence, these defect states can remain positively charged for a long period in the ultrathin gate dielectric, even under positive gate biasing. Results show that nitrogen increases the density of deep-level oxide defect precursors, thus raising the resistance of the ultrathin gate pMOSFET to post-NBTI recovery.

引用

页码：755 / 758

页数：4

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