Direct observation of the structure of defect centers involved in the negative bias temperature instability

We utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors. The defects include two Si/SiO2 interface silicon dangling bond centers (P-b0 and P-b1) and may also include an oxide silicon dangling bond center (E-'). Our observations strongly suggest that both P-b0 and P-b1 defects play major roles in the negative bias temperature instability. (C) 2005 American Institute of Physics.