Effect of substrate composition on the piezoelectric response of reactively sputtered AlN thin films

被引：71

作者：

Ruffner, JA ^{[1
]}

Clem, PG ^{[1
]}

Tuttle, BA ^{[1
]}

Dimos, D ^{[1
]}

Gonzales, DM ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

THIN SOLID FILMS | 1999年 / 354卷 / 1-2期

基金：

美国能源部;

关键词：

aluminium nitride; piezoelectric effect; sputtering; surface composition;

D O I：

10.1016/S0040-6090(99)00521-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deposition parameters were found to have a marked effect on piezoelectric response of reactive radio frequency (RF) sputtered AlN thin films. We observed piezoelectric response values ranging from -3.5 to +4.2 pm/V for 1 mu m thick AlN films deposited onto Ti//Ru electrode stacks. This substantial variation in piezoelectric response occurred despite the fact that all of the AIN thin films exhibited the correct crystallographic orientation for piezoelectric activity ((0002) crystallographic planes parallel to the substrate). An investigation of the effects of deposition parameters, in particular the nature of the Ru//AlN interface, was conducted. The lag time between deposition of adjacent thin film layers appeared to have the greatest affect on the value of the piezoelectric response. This result suggests that a chemical reaction occurring on the Ru thin film surface is responsible for changing an important thin film property such as dipole orientation within the overlying AlN thin film. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：256 / 261

页数：6