Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band

被引:15
作者
Ito, Hiroshi
Furuta, Tomofumi
Kosugi, Toshihiko
Hirata, Akihiko
Takahashi, Hiroyuki
Muramoto, Yoshifumi
Tokumitsu, Masami
Sato, Yasuhiro
Nagatsuma, Tadao
Ishibashi, Tadao
机构
[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan
[2] NTT Corp, NTT Microsyst Integrat Labs, Atsugi, Kanagawa 2430198, Japan
[3] NTT Elect Corp, Atsugi, Kanagawa 2430198, Japan
来源
IEICE ELECTRONICS EXPRESS | 2005年 / 2卷 / 16期
关键词
photodiode; HEMT amplifier; millimeter-wave; wireless transmission;
D O I
10.1587/elex.2.446
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A rectangular-waveguide output UTC-PD module integrating a HEMT power amplifier has been developed for operation in the 125-GHz band. The fabricated module exhibits maximum output power of more than 14 dBm with nearly. at frequency dependence in the 115-135 GHz range. A 10-Gbit/s error-free wireless transmission at 125 GHz with a minimum sensitivity of - 34 dBm for a bit-error-rate of 10-12 is also demonstrated using the fabricated module.
引用
收藏
页码:446 / 450
页数:5
相关论文
共 7 条
[1]   Low-phase noise photonic millimeter-wave generator using an AWG integrated with a 3-dB combiner [J].
Hirata, A ;
Takahashi, H ;
Okamoto, K ;
Nagatsuma, T .
2004 IEEE INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS, TECHNICAL DIGEST, 2004, :209-212
[2]  
HIRATA A, 2004, INT JOINT C TSMMW200, P51
[3]  
ISHIBASHI T, 1997, ULTR EL OPT TOP M LA
[4]   Pre-amplifier integrated uni-travelling-carrier photodiode module for operation in 120GHz band [J].
Ito, H ;
Furuta, T ;
Hirata, A ;
Kosugi, T ;
Muramoto, Y ;
Tokumitsu, M ;
Nagatsuma, T ;
Ishibashi, T .
ELECTRONICS LETTERS, 2005, 41 (06) :360-362
[5]   Rectangular waveguide output unitraveling-carrier photodiode module for high-power photonic millimeter-wave generation in the F-Band [J].
Ito, H ;
Ito, T ;
Muramoto, Y ;
Furuta, T ;
Ishibashi, T .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2003, 21 (12) :3456-3462
[6]   120-GHz Tx/Rx chipset for 10-gbit/s wireless applications using 0.1-μm-gate InP HEMTs [J].
Kosugi, T ;
Tokumitsu, M ;
Enoki, T ;
Muraguchi, M ;
Hirata, A ;
Nagatsuma, T .
2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY, 2004, :171-174
[7]  
Kosugi T, 2003, IEEE MTT S INT MICR, P129, DOI 10.1109/MWSYM.2003.1210899