Fast pulse driving of ferroelectric SBT capacitors in a nonvolatile latch

被引:3
作者
Koyama, Shinzo
Kato, Yoshihisa
Yamada, Takayoshi
Shimada, Yasuhiro
机构
[1] Matsushita Electric Industrial Company, Semiconductor Company, Semiconductor Device Research Center, Takatsuki-shi
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2006年 / E89C卷 / 09期
关键词
nonvolatile latch; SBT; fast resumption; power management; MEMORY TECHNOLOGY; VOLTAGE CMOS; LOGIC;
D O I
10.1093/ietele/e89-c.9.1368
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a fast shutdown and resumption of a logic circuit applied a nonvolatile latch having SrBi2(Ta,Nb)(2)O-9 (SBT) capacitors without a higher drive voltage than a logic voltage of 1.8 V. By assigning an individual drive circuit of the SBT capacitors to the nonvolatile latch not sharing a drive circuit with multiple nonvolatile latches, the fast shutdown and resumption of a logic circuit were completed in 7.5 ns at a drive voltage of 1.3 V The fast shutdown and resumption without an addition of a high drive voltage to a logic circuit meets a requirement from power-saving applications of system LSIs fabricated in CMOS technologies at 90-nm and below.
引用
收藏
页码:1368 / 1372
页数:5
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