ZnS/CdS/ZnS quantum dot quantum well produced in inverted micelles

被引：21

作者：

Cao, LX ^{[1
]}

Huang, SH

Shulin, E

机构：

[1] Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130021, Peoples R China

[3] Ocean Univ China, Inst Mat Sci & Engn, Qingdao 266003, Peoples R China

来源：

JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2004年 / 273卷 / 02期

关键词：

quantum dot quantum well; ZnS; CdS;

D O I：

10.1016/j.jcis.2004.02.031

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A ZnS/CdS/ZnS quantum dot quantum well was prepared in AOT micelles successfully and was characterized by absorption spectroscopy and fluorescence spectroscopy. Luminescence in the region of 350-600 nm was observed. The complete ZnS shell might reduce the number of defects on the surface of the US well, which were assumed to act as centers for radiationless recombination, resulting in the luminescence enhancement. (C) 2004 Elsevier Inc. All rights reserved.

引用

页码：478 / 482

页数：5

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