Critical role of surface steps in the alloying of Ge on Si(001)

被引：16

作者：

Hannon, JB ^{[1
]}

Copel, M

Stumpf, R

Reuter, MC

Tromp, RM

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Sandia Natl Labs, Livermore, CA 94551 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.92.216104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using low-energy electron microscopy, we show that intermixing of Ge on Si(001) during growth is enhanced on stepped surfaces and is hindered on terraces where step flow does not occur. On large terraces we have identified a dramatic and unanticipated structural rearrangement that facilitates intermixing: Pairs of steps spontaneously form and migrate over the surface, leaving alloyed regions in their wake. The driving force for step formation is the entropy gain associated with the enhanced intermixing of Ge.

引用

页码：216104 / 1

页数：4

共 15 条

[1] Low-energy electron microscopy study of step mobilities on Si(001) [J].

Bartelt, NC ;

Tromp, RM .

PHYSICAL REVIEW B, 1996, 54 (16) :11731-11740

[2] LOW-ENERGY-ELECTRON MICROSCOPY [J].

BAUER, E .

REPORTS ON PROGRESS IN PHYSICS, 1994, 57 (09) :895-938

[3] Etching of the Si(001) surface with molecular oxygen [J].

Hannon, JB ;

Bartelt, MC ;

Bartelt, NC ;

Kellogg, GL .

PHYSICAL REVIEW LETTERS, 1998, 81 (21) :4676-4679

[4] Thermal roughening of a thin film: A new type of roughening transition [J].

Maxson, JB ;

Savage, DE ;

Liu, F ;

Tromp, RM ;

Reuter, MC ;

Lagally, MG .

PHYSICAL REVIEW LETTERS, 2000, 85 (10) :2152-2155

[5] UHV CVD GROWTH OF SI AND SI-GE ALLOYS - CHEMISTRY, PHYSICS, AND DEVICE APPLICATIONS [J].

MEYERSON, BS .

PROCEEDINGS OF THE IEEE, 1992, 80 (10) :1592-1608

[6] GE EPITAXIAL OVERLAYERS ON SI(001) STUDIED BY SURFACE-SENSITIVE X-RAY-ABSORPTION FINE-STRUCTURE - EVIDENCE FOR STRAIN-INDUCED SURFACE REARRANGEMENT [J].

OYANAGI, H ;

SAKAMOTO, K ;

SHIODA, R ;

SAKAMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A) :3545-3552

[7] MIXED GE-SI DIMER GROWTH AT THE GE/SI(001)-(2X1) SURFACE [J].

PATTHEY, L ;

BULLOCK, EL ;

ABUKAWA, T ;

KONO, S ;

JOHANSSON, LSO .

PHYSICAL REVIEW LETTERS, 1995, 75 (13) :2538-2541

[8] THERMODYNAMIC PROPERTIES OF SI-GE ALLOYS [J].

QTEISH, A ;

RESTA, R .

PHYSICAL REVIEW B, 1988, 37 (12) :6983-6990

[9] Alloying at surfaces by the migration of reactive two-dimensional islands [J].

Schmid, AK ;

Bartelt, NC ;

Hwang, RQ .

SCIENCE, 2000, 290 (5496) :1561-1564

[10] DOMAIN BOUNDARY CONTROL OF EDGE ROUGHNESS IN VICINAL SI(001) [J].

SWARTZENTRUBER, BS ;

MO, YW ;

LAGALLY, MG .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :822-824

← 1 2 →