Electrical contrast observations and voltage measurements by Kelvin probe force gradient microscopy

被引:37
作者
Girard, P
Ramonda, M
Saluel, D
机构
[1] Univ Montpellier 2, LAIN, UMR CNRS 5011, F-34095 Montpellier 5, France
[2] Univ Montpellier 2, LMCP, F-34095 Montpellier, France
[3] CEA Grenoble, LETI, F-38054 Grenoble 09, France
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 04期
关键词
D O I
10.1116/1.1490387
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Kelvin probe force gradient microscopy is proposed to image and measure local dc voltage variations using the double pass method. The various voltages between sensor and sample induce electrical force gradients that change the resonance of the sensor. Images of the various phase shifts show contrasts, which, as we demonstrate, can be interpreted in terms of local changes in voltage and capacitive coupling. The interest of this method for observation and local voltage measurements is demonstrated and explained. (C) 2002 American Vacuum Society.
引用
收藏
页码:1348 / 1355
页数:8
相关论文
共 32 条
[1]   Finite element simulations of the resolution in electrostatic force microscopy [J].
Belaidi, S ;
Lebon, F ;
Girard, P ;
Leveque, G ;
Pagano, S .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S239-S243
[2]   Effect of tip shape in the design of long distance electrostatic force microscopy [J].
Belaidi, S ;
Girard, P ;
Leveque, G .
MICROELECTRONICS AND RELIABILITY, 1997, 37 (10-11) :1627-1630
[3]  
BELAIDI S, 1997, J APPL PHYS, V81, P1
[4]   ATOMIC RESOLUTION WITH ATOMIC FORCE MICROSCOPE [J].
BINNIG, G ;
GERBER, C ;
STOLL, E ;
ALBRECHT, TR ;
QUATE, CF .
EUROPHYSICS LETTERS, 1987, 3 (12) :1281-1286
[5]  
BOHM C, 1996, J PHYS D, V26, P842
[6]   Scanning local-acceleration microscopy [J].
Burnham, NA ;
Kulik, AJ ;
Gremaud, G ;
Gallo, PJ ;
Oulevey, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02) :794-799
[7]  
HOU AS, 1988, ELECTRON LETT, V28, P203
[8]   Resolution and contrast in Kelvin probe force microscopy [J].
Jacobs, HO ;
Leuchtmann, P ;
Homan, OJ ;
Stemmer, A .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1168-1173
[9]   Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy [J].
Jones, JT ;
Bridger, PM ;
Marsh, OJ ;
McGill, TC .
APPLIED PHYSICS LETTERS, 1999, 75 (09) :1326-1328
[10]   SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY [J].
KIKUKAWA, A ;
HOSAKA, S ;
IMURA, R .
APPLIED PHYSICS LETTERS, 1995, 66 (25) :3510-3512