Tunneling emission from self-organized In(Ga)As/GaAs quantum dots observed via time-resolved capacitance measurements

被引：47

作者：

Geller, M. ^{[1
]}

Stock, E. ^{[1
]}

Kapteyn, C. ^{[1
]}

Sellin, R. L. ^{[1
]}

Bimberg, D. ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.73.205331

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The observation of tunneling emission of electrons and holes from In(Ga)As/GaAs quantum dots in time-resolved capacitance measurements is reported. The electron and hole ground-state localization energies are determined as (290 +/- 30) meV and (210 +/- 20) meV, respectively. These energies are in excellent agreement with predictions from eight-band k center dot p theory. Based on the localization energies, we estimate the escape time for thermal excitation at room temperature as similar to 200 ns for electrons and similar to 0.5 ns for holes in case of a zero-electric-field situation. The electric-field dependence of the tunneling emission is investigated in detail.

引用

页数：8

共 40 条

[1]

*AIA, 2001, GALL ARS GAAS VAL BA

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY OF INP QUANTUM DOTS [J].

ANAND, S ;

CARLSSON, N ;

PISTOL, ME ;

SAMUELSON, L ;

SEIFERT, W .

APPLIED PHYSICS LETTERS, 1995, 67 (20) :3016-3018

[3] Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy [J].

Anand, S ;

Carlsson, N ;

Pistol, ME ;

Samuelson, L ;

Seifert, W .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3747-3755

[4] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[5] Exploitation of optical interconnects in future server architectures [J].

Benner, AF ;

Ignatowski, M ;

Kash, JA ;

Kuchta, DM ;

Ritter, MB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2005, 49 (4-5) :755-775

[6]

Blood P., 1992, The Electrical Characterization of Semiconductors. Majority Carriers and Electron States

[7] Quantum dot resonant cavity photodiode with operation near 1.3 mu m wavelength [J].

Campbell, JC ;

Huffaker, DL ;

Deng, H ;

Deppe, DG .

ELECTRONICS LETTERS, 1997, 33 (15) :1337-1339

[8] Hole emission processes in InAs/GaAs self-assembled quantum dots [J].

Chang, WH ;

Chen, WY ;

Hsu, TM ;

Yeh, NT ;

Chyi, JI .

PHYSICAL REVIEW B, 2002, 66 (19) :1-8

[9] Quantum-dot infrared photodetector with lateral carrier transport [J].

Chu, L ;

Zrenner, A ;

Bichler, M ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 2001, 79 (14) :2249-2251

[10] Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots [J].

Engström, O ;

Malmkvist, M ;

Fu, Y ;

Olafsson, HO ;

Sveinbjörnsson, EO .

APPLIED PHYSICS LETTERS, 2003, 83 (17) :3578-3580

← 1 2 3 4 →