Optimization of ZnSe growth on the cleavage-induced GaAs (1 1 0) surface by molecular-beam epitaxy

被引：10

作者：

Ko, HC

Park, DC

Kawakami, Y

Fujita, S

Fujita, S

机构：

[1] Dept. of Electron. Sci. and Eng., Kyoto University

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 178卷 / 03期

关键词：

ZnSe; GaAs (1 1 0); MBE;

D O I：

10.1016/S0022-0248(96)01126-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optimum conditions were investigated for the growth of high-quality ZnSe epitaxial layers on GaAs (1 1 0) cleaved surfaces in molecular-beam epitaxy (MBE) through the surface morphology, structural and optical characterizations. Most of the layers showed poor characteristics with bad surface morphology. However, the layer, which was grown at a substrate temperature of 250 degrees C and with a beam-equivalent pressure ratio, i.e. p(Se)/p(Zn) of 1.0, skewed a strong and sharp photoluminescence spectrum. A free exciton peak was located at 2.807 eV indicating a coherent growth of the layer. Moreover, the layer showed a clear X-ray diffraction curve with high-order interference fringes and a mirror-like surface morphology.

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收藏

页码：246 / 251

页数：6

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