Effects of H2O on Si fracture:: a hybrid quantum-classical simulation

被引:4
作者
Belkada, R
Igarashi, T
Ogata, S
机构
[1] Japan Sci & Technol Agcy, Kawagoe, Saitama 3320012, Japan
[2] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
关键词
silicon; stress corrosion cracking; static fatigue; multiscale simulation; hybrid simulation; density functional theory; molecular dynamics;
D O I
10.1016/j.commatsci.2004.02.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The mechanism of stress corrosion cracking in Si has became recently important, because it occurs in micro-machines. A novel hybrid quantum-mechanical/molecular-dynamics simulation code developed recently for parallel computers is used to perform simulations for a cracked Si-model under tension (mode-I opening) with three H2O molecules around the crack front to investigate possible effects of both, saturation of dangling bonds of Si with hydrogen atoms and environment molecules on the fracture initiation. Our results demonstrate formation of Si-O-Si bond by chemical reaction, which occurs at the crack tip after dissociation of O atom from H2O molecule. Moreover, the reaction exhibits no energy barrier and the hydrogen saturation has no effect on H2O molecule pathway. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:195 / 201
页数:7
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