1.6 W continuous-wave coherent power from large-index-step (Δn≈0.1) near-resonant, antiguided diode laser arrays

被引:54
作者
Yang, H [1 ]
Mawst, LJ [1 ]
Botez, D [1 ]
机构
[1] Univ Wisconsin, Reed Ctr Photon, Madison, WI 53706 USA
关键词
D O I
10.1063/1.125990
中图分类号
O59 [应用物理学];
学科分类号
摘要
Near-diffraction-limited-beam continuous-wave (cw) operation has been achieved to high powers from antiguided arrays with a large effective-index step between element and interelement regions. InGaAs/InGa(As)P/GaAs 40-element arrays (lambda = 0.985 mu m) emit in beams 2 x diffraction-limit (0.67 degrees) at 1.6 W and 9 x threshold in cw operation. 1 W of the coherent cw power resides in the central lobe. The external differential quantum efficiency and the threshold current are 40% and 0.4 A, respectively, for 1-mm-long devices of 191 mu m emitting aperture. The overall electrical to optical power conversion efficiency at 1.6 W output power is 23%. Modeling of the thermal effects in cw operation on the array modes reveals that for high-index-step (similar to 0.1) near-resonant antiguided arrays thermal lensing hardly affects high-order modes, and as a consequence, 2 x diffraction-limited beams can be maintained to watt-range cw powers. (C) 2000 American Institute of Physics. [S0003-6951(00)01210-9].
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页码:1219 / 1221
页数:3
相关论文
共 15 条
[1]  
BHATTACHARYA A, 1997, THESIS U WISCONSIN M
[2]  
BOSSERT DJ, 1997, P SOC PHOTO-OPT INS, V63, P3001
[3]  
Botez D., 1994, DIODE LASER ARRAYS, P1
[4]  
DZURKO KM, 1995, P IEEE LEOS 1995 ANN, V2, P400
[5]   Dynamic instabilities in master oscillator power amplifier semiconductor lasers [J].
Egan, A ;
Ning, CZ ;
Moloney, JV ;
Indik, RA ;
Wright, MW ;
Bossert, DJ ;
McInerney, JG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (01) :166-170
[6]   FILAMENT FORMATION IN A TAPERED GAALAS OPTICAL AMPLIFIER [J].
GOLDBERG, L ;
SURETTE, MR ;
MEHUYS, D .
APPLIED PHYSICS LETTERS, 1993, 62 (19) :2304-2306
[7]   High-power antiguided laser array fabricated without the need for overgrowth [J].
Gray, JM ;
Marsh, JH ;
Roberts, JH .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (03) :328-330
[8]   Internal temperature distribution measurements in high power semiconductor lasers [J].
O'Brien, P ;
O'Callaghan, J ;
McInerney, J .
ELECTRONICS LETTERS, 1998, 34 (14) :1399-1401
[9]   Spontaneous emission induced filamentation in flared amplifiers [J].
Ramanujan, S ;
Winful, HG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (05) :784-789
[10]  
SCHOENFELDER A, 1996, 15 IEEE INT SEM LAS