Catalyst-free growth of oriented single-walled carbon nanotubes on mica by ethanol chemical vapor deposition

被引:7
作者
Chen, Jiangying [1 ]
Gao, Fenglei [1 ]
Zhang, Lijie [1 ]
Huang, Shaoming [1 ]
机构
[1] Wenzhou Univ, Nanomat & Chem Key Lab, Wenzhou 325027, Peoples R China
关键词
Nanomaterials; Chemical vapor deposition; Catalyst; CIRCUITS; ARRAYS; LONG;
D O I
10.1016/j.matlet.2008.12.036
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this letter, it is reported for the first time that single-walled carbon nanotubes (SWNTs) can grow on mica substrate without additional catalyst by chemical vapor deposition (CVD) using ethanol as carbon source. The single-wall structure was characterized by Raman spectra and AFM (Atomic Force Microscopy) measurements. The growth of carbon nanotubes on mica surface contributes to the small amount of iron oxide in bare mica. The uniform dispersion and nanosized re particles formed from the reduction of iron oxide favor for the growth of SWNTs. Horizontally aligned superlong SWNTs arrays can be successfully generated on the mica surface, which is proved to be guided by the gas flow and under "kite growth mechanism". The mica is a machinable material which can be easily cut and made a narrow slit on, thus the nanotubes can traverse the slit which can be in millimeter scale and long suspended SWNTs can be generated. This will provide an opportunity to manipulate individual SWNT for various purposes. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:721 / 723
页数:3
相关论文
共 16 条
[1]   Nanotubes from carbon [J].
Ajayan, PM .
CHEMICAL REVIEWS, 1999, 99 (07) :1787-1799
[2]   Logic circuits with carbon nanotube transistors [J].
Bachtold, A ;
Hadley, P ;
Nakanishi, T ;
Dekker, C .
SCIENCE, 2001, 294 (5545) :1317-1320
[3]   Engineering carbon nanotubes and nanotube circuits using electrical breakdown [J].
Collins, PC ;
Arnold, MS ;
Avouris, P .
SCIENCE, 2001, 292 (5517) :706-709
[4]   Self-oriented regular arrays of carbon nanotubes and their field emission properties [J].
Fan, SS ;
Chapline, MG ;
Franklin, NR ;
Tombler, TW ;
Cassell, AM ;
Dai, HJ .
SCIENCE, 1999, 283 (5401) :512-514
[5]   Growth mechanism of oriented long single walled carbon nanotubes using "fast-heating" chemical vapor deposition process [J].
Huang, SM ;
Woodson, M ;
Smalley, R ;
Liu, J .
NANO LETTERS, 2004, 4 (06) :1025-1028
[6]   Growth of millimeter-long and horizontally aligned single-walled carbon nanotubes on flat substrates [J].
Huang, SM ;
Cai, XY ;
Liu, J .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (19) :5636-5637
[7]   SINGLE-SHELL CARBON NANOTUBES OF 1-NM DIAMETER [J].
IIJIMA, S ;
ICHIHASHI, T .
NATURE, 1993, 363 (6430) :603-605
[8]   Carbon nanotube graphoepitaxy: Highly oriented growth by faceted nanosteps [J].
Ismach, A ;
Kantorovich, D ;
Joselevich, E .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (33) :11554-11555
[9]   High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes [J].
Kang, Seong Jun ;
Kocabas, Coskun ;
Ozel, Taner ;
Shim, Moonsub ;
Pimparkar, Ninad ;
Alam, Muhammad A. ;
Rotkin, Slava V. ;
Rogers, John A. .
NATURE NANOTECHNOLOGY, 2007, 2 (04) :230-236
[10]   Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers [J].
Kong, J ;
Soh, HT ;
Cassell, AM ;
Quate, CF ;
Dai, HJ .
NATURE, 1998, 395 (6705) :878-881