Low-Frequency Noise in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors

被引：58

作者：

Lee, Jeong-Min ^{[1
]}

Cheong, Woo-Seok ^{[2
]}

Hwang, Chi-Sun ^{[2
]}

Cho, In-Tak ^{[1
]}

Kwon, Hyuck-In ^{[3
]}

Lee, Jong-Ho ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea

[2] ETRI, Transparent Elect Team, Taejon 305350, South Korea

[3] Daegu Univ, Sch Elect Engn, Gyongsan 712714, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

关键词：

Amorphous indium-gallium-zinc oxide (a-IGZO); low-frequency noise (LFN); mobility fluctuation; thin-film transistors (TFTs); 1/f noise theory; 1/F NOISE;

D O I：

10.1109/LED.2009.2015783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the low-frequency noise (LFN) properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) as a function of frequency, bias, and channel length of devices. The measured noise power spectral density of drain current (S-iD) shows that the low-frequency noise in a-IGZO TFTs obeys the classical 1/f noise theory, i.e., it fits well to a 1/f(gamma) power law with gamma similar to 1 in the frequency range of 10 Hz to 1 kHz. From the dependence of normalized noise power spectral density (Si-D/I-D(2)) on the gate voltage, mobility fluctuation is considered as a dominant LFN mechanism in a-IGZO TFTs. The magnitude of Si-D/I-D(2) is inversely proportional to the channel length of devices, which indicates that contact noise is insignificant in a-IGZO TFTs.

引用

页码：505 / 507

页数：3

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