Rapid solid-phase crystallization of high-rate, hot-wire chemical-vapor-deposited hydrogenated amorphous silicon

被引：17

作者：

Young, David L.

Stradins, Paul

Xu, Yueqin

Gedvilas, Lynn

Reedy, Bob

Mahan, A. H.

Branz, Howard M.

Wang, Qi

Williamson, D. L.

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

D O I：

10.1063/1.2361163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solid-phase crystallization of hydrogenated amorphous silicon thin films deposited by hot-wire (HW) and plasma-enhanced (PE) chemical vapor deposition was studied using in situ optical monitoring. HW films crystallized at least five times faster than PE films, independent of H and O concentration, deposition rate (2-110 angstrom/s), and nanovoid density due to reduced enthalpy barriers to both nucleation and final crystallization, which may be related to the presence of larger regions of highly ordered Si in the films. (c) 2006 American Institute of Physics.

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共 13 条

[1] Magnetic susceptibility and microstructure of hydrogenated amorphous silicon measured by nuclear magnetic resonance on a single thin film [J].

Baugh, J ;

Han, DX ;

Kleinhammes, A ;

Wu, Y .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :466-468

[2] Crystalline silicon on glass (CSG) thin-film solar cell modules [J].

Green, MA ;

Basore, PA ;

Chang, N ;

Clugston, D ;

Egan, R ;

Evans, R ;

Hogg, D ;

Jarnason, S ;

Keevers, M ;

Lasswell, P ;

O'Sullivan, J ;

Schubert, U ;

Turner, A ;

Wenham, SR ;

Young, T .

SOLAR ENERGY, 2004, 77 (06) :857-863

[3] Rapid thermal annealing of hot wire chemical-vapor-deposited a-Si:H films:: The effect of the film hydrogen content on the crystallization kinetics, surface morphology, and grain growth -: art. no. 023597 [J].

Mahan, AH ;

Roy, B ;

Reedy, RC ;

Readey, DW ;

Ginley, DS .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (02) :1-9

[4] Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 A/s [J].

Mahan, AH ;

Xu, Y ;

Williamson, DL ;

Beyer, W ;

Perkins, JD ;

Vanecek, M ;

Gedvilas, LM ;

Nelson, BP .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) :5038-5047

[5] Solid phase post-treatment of polysilicon films by a continuous argon laser [J].

Michaud, JF ;

Rogel, R ;

Mohammed-Brahim, T ;

Sarret, M ;

Bonnaud, O .

THIN SOLID FILMS, 2005, 487 (1-2) :81-84

[6] Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer [J].

Pangal, K ;

Sturm, JC ;

Wagner, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (04) :707-714

[7] Crystal grain nucleation in amorphous silicon [J].

Spinella, C ;

Lombardo, S ;

Priolo, F .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) :5383-5414

[8]

STRADINS P, IN PRESS APPL PHYS L

[9] MEASUREMENT OF THE INTERFACIAL ENERGY BETWEEN AMORPHOUS SI AND CRYSTALLINE SI [J].

TU, KN .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01) :32-34

[10] RATE OF NUCLEATION IN CONDENSED SYSTEMS [J].

TURNBULL, D ;

FISHER, JC .

JOURNAL OF CHEMICAL PHYSICS, 1949, 17 (01) :71-73