X-ray photoelectron spectroscopy studies of the effects of plasma etching on amorphous carbon nitride films

被引：24

作者：

Jiang, LD ^{[1
]}

Fitzgerald, AG

Rose, MJ

Cheung, R

Rong, B

van der Drift, E

机构：

[1] Univ Dundee, Dept Elect Engn & Phys, Carnegie Lab Phys, Dundee DD1 4HN, Scotland

[2] Univ Edinburgh, Dept Elect & Elect Engn, Edinburgh EH9 3JF, Midlothian, Scotland

[3] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, NL-2600 GB Delft, Netherlands

来源：

APPLIED SURFACE SCIENCE | 2002年 / 193卷 / 1-4期

关键词：

carbon nitride; plasma etching; XPS;

D O I：

10.1016/S0169-4332(02)00225-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of post-treated oxygen plasma etching procedures have been investigated for amorphous carbon nitride (a-C:N) films deposited by dc magnetron sputtering. X-ray photoelectron spectroscopy (XPS) has been used to study the microstructure of these films. It has been found that the relative concentration of the beta-C3N4-like phase in the a-C:N films is enhanced significantly by oxygen plasma etching and by increasing the dc bias voltages during the etch experiments. This study reveals that an oxygen plasma can work as an effective chemical etchant for the graphite-like carbon-nitrogen phase in a-C:N films. This suggests a very promising way of obtaining harder a-C:N films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：144 / 148

页数：5

共 18 条

[1] High speed anisotropic dry etching of CoNbZr for next generation magnetic recording [J].

Andriesse, MS ;

Zijlstra, T ;

van der Drift, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3462-3466

[2] Bonding structure in carbon nitride films: variation with nitrogen content and annealing temperature [J].

Chowdhury, AKMS ;

Cameron, DC ;

Hashmi, MSJ .

SURFACE & COATINGS TECHNOLOGY, 1999, 112 (1-3) :133-139

[3] Study of the thermal stability of carbon nitride thin films prepared by reactive magnetron sputtering [J].

Fernández-Ramos, C ;

Sayagués, MJ ;

Rojas, TC ;

Alcalá, MD ;

Real, C ;

Fernández, A .

[4] STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS-CARBON NITRIDE [J].

HAN, HX ;

FELDMAN, BJ .

SOLID STATE COMMUNICATIONS, 1988, 65 (09) :921-923

[5] Nitrogen-driven sp3 to sp2 transformation in carbon nitride materials [J].

Hu, JT ;

Yang, PD ;

Lieber, CM .

PHYSICAL REVIEW B, 1998, 57 (06) :R3185-R3188

[6] Microstructural characterization of carbon films and CNx films produced by N+ implantation [J].

Laidani, N ;

Miotello, A ;

Glisenti, A ;

Bottani, C ;

Perriere, J .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (08) :1743-1761

[7] Hardness and modulus properties in ion-beam-modified amorphous carbon: Temperature and dose rate dependences [J].

Lee, DH ;

Lee, H ;

Park, B .

JOURNAL OF MATERIALS RESEARCH, 1997, 12 (08) :2057-2063

[8] PREDICTION OF NEW LOW COMPRESSIBILITY SOLIDS [J].

LIU, AY ;

COHEN, ML .

SCIENCE, 1989, 245 (4920) :841-842

[9] CARBON NITRIDE DEPOSITED USING ENERGETIC SPECIES - A 2-PHASE SYSTEM [J].

MARTON, D ;

BOYD, KJ ;

ALBAYATI, AH ;

TODOROV, SS ;

RABALAIS, JW .

PHYSICAL REVIEW LETTERS, 1994, 73 (01) :118-121

[10] Effects of plasma etching on DLC films [J].

Massi, M ;

Mansano, RD ;

Maciel, HS ;

Otani, C ;

Verdonck, P ;

Nishioka, LNBM .

THIN SOLID FILMS, 1999, 343 :381-384

← 1 2 →