Fundamental Thickness Limit of Itinerant Ferromagnetic SrRuO3 Thin Films

被引：153

作者：

Chang, Young Jun ^{[1
,2
]}

Kim, Choong H. ^{[2
,3
]}

Phark, S. -H. ^{[1
,2
]}

Kim, Y. S. ^{[1
,2
]}

Yu, J. ^{[2
,3
]}

Noh, T. W. ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, ReCOE, Seoul 151747, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, FPRD, Seoul 151747, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, CSCMR, Seoul 151747, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

ELECTRONIC-STRUCTURE; LAYER;

D O I：

10.1103/PhysRevLett.103.057201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on a fundamental thickness limit of the itinerant ferromagnetic oxide SrRuO3 that might arise from the orbital-selective quantum confinement effects. Experimentally, SrRuO3 films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature T-C starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the T-C decrease to a decrease in the density of states (N-0). Namely, in the thin film geometry, the hybridized Ru d(yz,zx) orbitals are terminated by top and bottom interfaces, resulting in quantum confinement and reduction of N-0.

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页数：4

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