Ultrafast hot-carrier dynamics in semiconductor saturable absorber mirrors

被引：21

作者：

Joschko, M ^{[1
]}

Langlois, P

Thoen, ER

Koontz, EM

Ippen, EP

Kolodziejski, LA

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Elect Res Lab, Cambridge, MA 02139 USA

[2] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.126039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond pump-probe experiments have been used to study the ultrafast nonlinear dynamics of InGaAs/InP semiconductor saturable absorber mirrors. The relative contributions of absorption bleaching and induced absorption are investigated by varying the excitation fluence over more than four orders of magnitude, well beyond complete absorption saturation. Enhanced free carrier absorption due to highly excited carriers with an extended relaxation time of 2.8 ps dominates the differential reflectivity at ultrahigh fluences and has been studied via a two-color pump-probe measurement. (C) 2000 American Institute of Physics. [S0003-6951(00)02411-6].

引用

页码：1383 / 1385

页数：3

共 15 条

[1] Electron-phonon relaxation rates in InGaAs-InP and HgCdTe-CdTe quantum wells [J].

Alcalde, AM ;

Weber, G .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7276-7281

[2] FEMTOSECOND INTERVALLEY SCATTERING IN GAAS [J].

BECKER, PC ;

FRAGNITO, HL ;

CRUZ, CHB ;

SHAH, J ;

FORK, RL ;

CUNNINGHAM, JE ;

HENRY, JE ;

SHANK, CV .

APPLIED PHYSICS LETTERS, 1988, 53 (21) :2089-2090

[3] Short cavity erbium/ytterbium fiber lasers mode-locked with a saturable Bragg reflector [J].

Collings, BC ;

Bergman, K ;

Cundiff, ST ;

Tsuda, S ;

Kutz, JN ;

Cunningham, JE ;

Jan, WY ;

Koch, M ;

Knox, WH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (04) :1065-1075

[4] Ultrafast carrier dynamics and intervalley scattering in ZnSe [J].

Dougherty, DJ ;

Fleischer, SB ;

Warlick, EL ;

House, JL ;

Petrich, GS ;

Kolodziejski, LA ;

Ippen, EP .

APPLIED PHYSICS LETTERS, 1997, 71 (21) :3144-3146

[5] FEMTOSECOND GAIN DYNAMICS AND SATURATION BEHAVIOR IN INGAASP MULTIPLE QUANTUM-WELL OPTICAL AMPLIFIERS [J].

HALL, KL ;

LAI, Y ;

IPPEN, EP ;

EISENSTEIN, G ;

KOREN, U .

APPLIED PHYSICS LETTERS, 1990, 57 (27) :2888-2890

[6] Semiconductor saturable absorber mirrors supporting sub-10-fs pulses [J].

Jung, ID ;

Kartner, FX ;

Matuschek, N ;

Sutter, DH ;

MorierGenoud, F ;

Shi, Z ;

Scheuer, V ;

Tilsch, M ;

Tschudi, T ;

Keller, U .

APPLIED PHYSICS B-LASERS AND OPTICS, 1997, 65 (02) :137-150

[7]

Keller U, 1999, SEMICONDUCT SEMIMET, V59, P211

[8] High fluence ultrafast dynamics of semiconductor saturable absorber mirrors [J].

Langlois, P ;

Joschko, M ;

Thoen, ER ;

Koontz, EM ;

Kärtner, FX ;

Ippen, EP ;

Kolodziejski, LA .

APPLIED PHYSICS LETTERS, 1999, 75 (24) :3841-3843

[9] An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking [J].

Lederer, MJ ;

Luther-Davies, B ;

Tan, HH ;

Jagadish, C .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (11) :2150-2161

[10] CARRIER HEATING IN INGAASP LASER-AMPLIFIERS DUE TO 2-PHOTON ABSORPTION [J].

MORK, J ;

MARK, J ;

SELTZER, CP .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2206-2208

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