Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy

被引：24

作者：

Tsai, CD ^{[1
]}

Lee, CT ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the passivation mechanism and the chemistry of an (NH4)(2)S-x treated (100) InGaP surface using x-ray photoelectron spectroscopy. The native oxide on the as-etched InGaP surface could be further removed by a suitable (NH4)(2)S-x-treatment process. The measured x-ray photoelectron spectra revealed that the S atoms, in addition to bonding to the elemental sulfur, also bonded with the In and Ga atoms on the (NH4)(2)S-x-treated InGaP surface. However, the S atoms occupied the phosphorous-related vacancies instead of bonding with the P atoms. A proposed structural model of a sulfur-passivated surface is then presented. (C) 2000 American Institute of Physics. [S0021-8979(00)02209-X].

引用

页码：4230 / 4233

页数：4

共 17 条

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[2] (NH4)2SX-TREATED INP(001) STUDIED BY HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY [J].