Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)(2)S-x treatment

被引：20

作者：

Lee, CT

Lan, MH

Tsai, CD

机构：

[1] Institute of Optical Sciences, National Central University, Chung-Li

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(97)00159-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To extend the high performances of the GaAs MSM photodetectors with InGaP buffer and capping layers, the (NH4)(2)S-x treatment of InGaP is investigated. The surface states are reduced by sulfur passivation. Whereupon, the performances of InGaP Schottky contact with Ti/Pt/Au metals are improved. The improved dark current and insensitive responsivity with incident optical power are demonstrated by suitable process control of sulfur passivation. (C) 1997 Elsevier Science Ltd.

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页码：1715 / 1719

页数：5

相关论文

共 27 条

[1] Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowering [J].

Burm, J ;

Eastman, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (01) :113-115

[2] H-MESFET COMPATIBLE GAAS/ALGAAS MSM PHOTODETECTOR [J].

BURROUGHES, JH .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (07) :660-662

[3]

CHEN YJ, 1994, IEEE T ELECTRON DEV, V41, P637

[4] SELF-ALIGNED INGAAS/GAAS/INGAP QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH 2 GROWTH STEPS [J].

CHEN, YK ;

WU, MC ;

KUO, JM ;

CHIN, MA ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :2929-2931

[5] HIGH-SPEED, LOW-NOISE INGAP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

FRESINA, MT ;

AHMARI, DA ;

MARES, PJ ;

HARTMANN, QJ ;

FENG, M ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) :540-541

[6]

HASSE MA, 1991, APPL PHYS LETT, V58, P616

[7] SI-IMPLANTED INGAP/GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

HYUGA, F ;

AOKI, T ;

SUGITANI, S ;

ASAI, K ;

IMAMURA, Y .

APPLIED PHYSICS LETTERS, 1992, 60 (16) :1963-1965

[8] SULFUR AS A SURFACE PASSIVATION FOR INP [J].

IYER, R ;

CHANG, RR ;

LILE, DL .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :134-136

[9]

KINGENSTEIN M, 1994, SOLID STATE ELECT, V37, P333

[10] INTERFACE PROPERTIES OF (NH4)(2)S-X-TREATED IN0.5GA0.5P SCHOTTKY CONTACTS [J].

KWON, SD ;

KIM, CH ;

KWON, HK ;

CHOE, BD ;

LIM, H .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :2202-2204