SI-IMPLANTED INGAP/GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：18

作者：

HYUGA, F ^{[1
]}

AOKI, T ^{[1
]}

SUGITANI, S ^{[1
]}

ASAI, K ^{[1
]}

IMAMURA, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 16期

关键词：

D O I：

10.1063/1.107112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new device structure for Si-implanted GaAs metal-semiconductor field-effect transistors (MESFETs), with an InGaP thin film on the GaAs surface, is proposed. A 200 angstrom InGaP film passivated the GaAs surface and increased the Schottky barrier height on n-type GaAs layers with a carrier concentration as high as 3 x 10(18)/cm3 to more than 0.6 eV. These effects persisted after annealing at 800-degrees-C for 10 min. The transconductance of 2-mu-m-gate MESFETs remained above 150 mS/mm at gate voltages up to 1.0 V. Si-implanted InGaP/GaAs MESFETs are thus promising devices for use in high-speed and low-noise integrated circuits.

引用

页码：1963 / 1965

页数：3

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