Optical band gap dependence on composition and thickness of InxGa1-xN (0<x<0.25) grown on GaN

被引：92

作者：

Parker, CA

Roberts, JC

Bedair, SM

Reed, MJ

Liu, SX

El-Masry, NA

Robins, LH

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] Natl Inst Stand & Technol, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期

关键词：

D O I：

10.1063/1.125079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Band gap measurements have been carried out in strained and relaxed InxGa1-xN epilayers with x < 0.25. Values of x were determined from x-ray diffraction of relaxed films. The lowest energy absorption threshold, measured by transmittance, was found to occur at the same energy as the peak of the photoluminescence spectrum. Bowing parameters for both strained and relaxed films were determined to be 3.42 and 4.11 eV, respectively. The dependence of the band gap shift, Delta E-g, on strain is presented. (C) 1999 American Institute of Physics. [S0003-6951(99)04844-5].

引用

页码：2566 / 2568

页数：3

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Optical band gap dependence on composition and thickness of InxGa1-xN (0&lt;x&lt;0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0<x<0.25) grown on GaN