Chemical surface passivation of HfO2 films in a ZnO nanowire transistor

被引：36

作者：

Moon, Tae-Hyoung

Jeong, Min-Chang

Oh, Byeong-Yun

Ham, Moon-Ho

Jeun, Min-Hong

Lee, Woo-Young

Myoung, Jae-Min ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Mat Sci & Engn, Nano Device Lab, Seoul 120749, South Korea

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 09期

关键词：

D O I：

10.1088/0957-4484/17/9/007

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of different annealing atmospheres on the chemical surface structure of HfO2 gate dielectric layers have been evaluated in terms of the improvement in the transconductance (g(m)), current on/off ratio (I-on/I-off), and carrier mobility (mu(e)) of a back-gated ZnO nanowire field-effect transistor (FET). Compared to O-2 and N-2 annealed HfO2-gated transistors, the H-2 annealed HfO2-gated ZnO nanowire FET exhibited a higher transconductance of 1.77 x 10(-7) A V-1, on/off current ratio of similar to 1.2 x 10(4), and electron mobility of 11.90 cm(2) V-1 s(-1).

引用

收藏

页码：2116 / 2121

页数：6

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