Effects of high temperature forming gas anneal on the characteristics of metal-oxide-semiconductor field-effect transistor with HfO2 gate stack

被引：16

作者：

Choi, R ^{[1
]}

Kang, CS ^{[1
]}

Cho, HJ ^{[1
]}

Kim, YH ^{[1
]}

Akbar, MS ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 24期

关键词：

D O I：

10.1063/1.1755412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of high temperature forming gas (N-2:H-2=96:4) anneal (600 degreesC) prior to metallization have been evaluated in terms of the improvement in the carrier mobility of HfO2/nitride layer gate stack metal-oxide-semiconductor field-effect transistors with TaN gate electrode. The high-temperature forming gas anneal has been found to be effective in improving the interface quality by lowering both interface state density and interface charges. The improvements resulting in decreased Coulombic scattering centers can be attributed to hydrogen atoms that were concentrated near the interface. (C) 2004 American Institute of Physics.

引用

页码：4839 / 4841

页数：3

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