Electrical characteristics of a WSix contact electrode with a WSixN diffusion barrier formed by using electron Cyclotron Resonance plasma Nitridation

被引：2

作者：

Hirata, A ^{[1
]}

Hosoya, T ^{[1
]}

Machida, K ^{[1
]}

Kyuragi, H ^{[1
]}

Akiya, H ^{[1
]}

机构：

[1] YAMATAKE HONEYWELL CO LTD, FA SYST DIV, OHTA KU, TOKYO 144, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 11期

关键词：

D O I：

10.1149/1.1838125

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrical characteristics of a WSichi contact electrode with a WSichi N diffusion barrier are evaluated. The WSichiN diffusion barrier was formed by WSi, surface nitridation using electron cyclotron resonance nitrogen plasma. It is found that the WSchiN layer prevents impurity diffusion from the diffusion layer into the WSi, electrode and the concentration of impurities at the interface between the diffusion layer and WSichiWSi2N/WSichi, electrode is over 1 x 10(20) atom/cm(3) even after rapid thermal annealing (RTA) at 1100 degrees C for 10 s. Moreover, the total resistance of both an n(+)-Si/WSichi/WSichiN/WSichi and p(+)-Si/WSichi/WSichiN/WSichi contact system, which is the sum of the electrode resistance and the contact resistance at the electrode/diffusion layer interface, decreases below one-fifteenth after RTA. The reduction of the total resistance by RTA is discussed.

引用

页码：3993 / 3998

页数：6

共 19 条

[1] [Anonymous], PHYS SEMICONDUCTOR D
[2] Chen D. C., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P118
[3] DRYNAN JM, 1993, 9297 IEICE SDM, P17
[4] Fair R.B., 1981, IMPURITY DOPING PROC
[5] Fujii T., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P845, DOI 10.1109/IEDM.1992.307489
[6] A WSixN diffusion barrier formed with electron cyclotron resonance nitrogen plasma
Hirata, A
Hosoya, T
Machida, K
Takaoka, H
Akiya, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (11) : 3747 - 3751
[7] A NITRIDE-ISOLATED MOLYBDENUM-POLYSILICON GATE ELECTRODE FOR MOS VLSI CIRCUITS
ITO, T
HORIE, H
FUKANO, T
ISHIKAWA, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) : 464 - 468
[8] Kuroi T., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P325, DOI 10.1109/IEDM.1993.347342
[9] OHMIC BEHAVIOR OF AU/WSIN/(AU,GE,NI)-NORMAL-GAAS SYSTEMS
MERKEL, U
NEBAUER, E
MAI, M
[J]. THIN SOLID FILMS, 1992, 217 (1-2) : 108 - 112
[10] TRANSITION-METAL SILICIDES
MURARKA, SP
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 : 117 - 137

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