Significant change in in-plane magnetic anisotropy of (Ga,Mn)As epilayer induced by low-temperature annealing

被引：11

作者：

Kato, H

Hamaya, K

Taniyama, T

Kitamoto, Y

Munekata, H

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 7A期

关键词：

magnetic semiconductor; (Ga; Mn)As; annealing; magnetoresistance; magnetic anisotropy;

D O I：

10.1143/JJAP.43.L904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We find significant changes in the in-plane magnetic anisotropy of a (Ga,Mn)As epilayer by low-temperature annealing. Detailed magnetization and transport measurements reveal an enhancement in the contribution of a uniaxial anisotropy along [110] after annealing. The change in the magnetic anisotropy is affected by increasing hole concentration due to the annealing.

引用

收藏

页码：L904 / L906

页数：3

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