Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

被引：83

作者：

Kedzierski, Jakub ^{[1
]}

Hsu, Pei-Lan ^{[2
]}

Reina, Alfonso ^{[2
]}

Kong, Jing ^{[2
]}

Healey, Paul ^{[1
]}

Wyatt, Peter ^{[1
]}

Keast, Craig ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 07期

基金：

美国国家科学基金会;

关键词：

Carbon CVD; carbon transistors; chemical-vapor deposition (CVD); epitaxial graphene; graphene; graphene transistors; FILMS;

D O I：

10.1109/LED.2009.2020615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO(2) substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.

引用

页码：745 / 747

页数：3

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