Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors

被引：13

作者：

Lim, Jung Ah ^{[1
]}

Park, Song Hee ^{[2
]}

Baek, Ji Hye ^{[2
]}

Ko, Young Dong ^{[3
]}

Lee, Hwa Sung ^{[1
]}

Cho, Kilwon ^{[1
]}

Lee, Jun Young ^{[4
]}

Lee, Dong Ryeol ^{[3
]}

Cho, Jeong Ho ^{[2
]}

机构：

[1] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Chem Engn, Pohang 790784, South Korea

[2] Soongsil Univ, Dept Organ Mat & Fiber Engn, Seoul 156743, South Korea

[3] Soongsil Univ, Dept Phys, Seoul 156743, South Korea

[4] Sungkyunkwan Univ, Sch Appl Chem & Chem Engn, Suwon 440746, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 23期

关键词：

ENERGY-LEVEL ALIGNMENT; THIN-FILM TRANSISTORS; POLYMER ELECTRODES; PENTACENE; METAL; GROWTH;

D O I：

10.1063/1.3273862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (similar to 10(3) S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm(2)/Vs and an ON/OFF current ratio of 10(7) were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT: PSS electrodes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3273862]

引用

页数：3

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