The effect of frequency and duty cycle of a pulsed microwave plasma on the chemical vapor deposition of diamond

被引：20

作者：

Khachan, J ^{[1
]}

Gardner, D ^{[1
]}

机构：

[1] Univ Sydney, Sch Phys, Dept Plasma Phys, Sydney, NSW 2006, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 11期

关键词：

D O I：

10.1063/1.371623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the effect of a pulsed microwave discharge on the deposition rate of polycrystalline diamond by varying the pulse repetition rate and duty cycle. A simple model of the dynamic plasma chemistry is developed in order to explain the increase in growth rate with frequency for the same average power. Changing the duty cycle while keeping the total plasma on-time constant resulted in the same film thickness for all duty cycles. One possible implication of this is that growth takes place when the pulse is on. (C) 1999 American Institute of Physics. [S0021-8979(99)00920-2].

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页码：6576 / 6579

页数：4

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