AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

被引：110

作者：

Kikuchi, A

Bannai, R

Kishino, K

Lee, CM

Chyi, JI

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

[2] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 09期

关键词：

D O I：

10.1063/1.1501157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al2O3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN barrier layers sandwiched by Si-doped n-type GaN contact layers. The current-voltage characteristics of mesa diode samples showed clear negative differential resistance (NDR) at room temperature. The NDR was observed at 2.4 V with a peak current of 2.9 mA, which corresponds to 180 A/cm(2). A peak-to-valley current ratio as high as 32 was obtained. (C) 2002 American Institute of Physics.

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页码：1729 / 1731

页数：3

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