On the delay time in photoluminescence of Si-nanoclusters, produced by laser ablation

被引：21

作者：

Luk'yanchuk, B

Marine, W

机构：

[1] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia

[2] Fac Sci Luminy, CNRS, UMR 6631, F-13288 Marseille, France

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

基金：

俄罗斯基础研究基金会;

关键词：

laser ablation; silicon nanoclusters; condensation; photoluminescence;

D O I：

10.1016/S0169-4332(99)00472-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The condensation of Si clusters, produced by ns-laser ablation, is completed typically after a few mu s at sufficiently low pressure of background gas. The photoluminescence from free gas suspended Si-cluster was experimentally observed after a long delay time of the order of a few hundred mu s. We show that this delay time is related to long cooling and crystallization processes necessary to reach the state with pronounced particle photoluminescence. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：314 / 319

页数：6

共 27 条

[1]

Anisimov S.I., 1995, Instabilities in Laser-matter Interaction

[2] A fast quantitative modelling of ns laser ablation based on non-stationary averaging technique [J].