Large-area two-dimensional silicon photonic crystals for infrared light fabricated with laser interference lithography

被引：19

作者：

Prodan, L

Euser, TG

van Wolferen, HAGM

Bostan, C

de Ridder, RM

Beigang, R

Boller, KJ

Kuipers, L

机构：

[1] Univ Twente, Fac Appl Phys, Laser Phys & Nonlinear Opt Grp, NL-7500 AE Enschede, Netherlands

[2] Univ Twente, Fac Appl Phys, Appl Opt Grp, NL-7500 AE Enschede, Netherlands

[3] Univ Twente, Fac Appl Phys, Complex Photon Syst Grp, NL-7500 AE Enschede, Netherlands

[4] Univ Twente, Dept Elect Engn, Lightwave Devices Grp, NL-7500 AE Enschede, Netherlands

[5] Univ Kaiserslautern, Fachbereich Phys, D-67563 Kaiserslautern, Germany

来源：

NANOTECHNOLOGY | 2004年 / 15卷 / 05期

关键词：

D O I：

10.1088/0957-4484/15/5/040

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the production of large-area 2D photonic crystals from high-index material with laser interference lithography (LIL). A new image reversal photoresist is used in combination with an anti-reflection coating to suppress undesired reflections. The photonic crystals possess a cubic pattern of air holes in a 500 nm silicon layer and cover an area of 1 cm(2).

引用

页码：639 / 642

页数：4

共 12 条

[1] Fabrication of photonic crystals in silicon-on-insulator using 248-nm deep UV lithography [J].