IBM-JS']JSR 193mn negative tone resist: Polymer design, material properties, and lithographic performance

被引：15

作者：

Patel, K ^{[1
]}

Lawson, M ^{[1
]}

Varanasi, P ^{[1
]}

Medeiros, D ^{[1
]}

Wallraff, G ^{[1
]}

Brock, P ^{[1
]}

DiPietro, R ^{[1
]}

Nishimura, Y ^{[1
]}

Chiba, T ^{[1
]}

Slezak, M ^{[1
]}

机构：

[1] IBM SRDC, Hopewell Jct, NY 12533 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2 | 2004年 / 5376卷

关键词：

193nm lithography; chemically amplified; negative-tone resist; crosslinking; hexafluoroalcohol; etch;

D O I：

10.1117/12.536874

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It has been previously proposed that negative-tone resist process would have an intrinsic advantage for printing narrow trench geometry. To demonstrate this for 193nm lithography, a negative resist with performance comparable to a leading positive resist is required. In this paper we report the joint development of a hexafluoroalcohol containing, 193nm, negative-tone, chemically amplified resist based on the crosslinking approach. Lithographic performance is presented which includes the ability of the negative-tone resist to print 90nm line/space and isolated trenches with standard resist processing. The impact of the fluorinated polymer on etch performance is also quantified. Finally, key resist characteristics and their influence on performance and limiting factors such as microbridging are discussed.

引用

页码：94 / 102

页数：9

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