学术探索
学术期刊
新闻热点
数据分析
智能评审

Electrical transport in semiconducting carbon nanotubes

被引：18
作者：
Moriyama, S
Toratani, K
Tsuya, D
Suzuki, M
Aoyagi, Y
Ishibashi, K
机构：
[1] RIKEN, Inst Phys & Chem Res, Adv Device Lab, Wako, Saitama 3510198, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Technol, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Chiba Univ, Dept Mat Sci, Inage, Chiba 2368522, Japan
[4] Japan Sci & Technol, CREST, Kawagoe, Saitama 3320012, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 24卷 / 1-2期
关键词：
semiconducting carbon nanotube; quantum dot; single-wall carbon nanotubes;
D O I：
10.1016/j.physe.2004.04.022
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Electrical transport measurements have been carried out for a rope of semiconducting single-wall carbon nantoubes in a temperature range from 2.6 to 200 K. At room temperature, the source drain current decreased as the gate voltage was increased, a p-type carrier behavior. However, as the temperature was decreased in a liquid helium temperature, an irregular Coulomb blockade diamonds have been observed. The temperature dependence of the current at large bias voltage in which Coulomb blockade effect is not important has shown an activated behavior, suggesting the tunnel barrier at the tube-metal junctions. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：46 / 49
页数：4
相关论文
共 16 条
[1]   Impurity scattering in carbon nanotubes - Absence of back scattering [J].
Ando, T ;
Nakanishi, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1998, 67 (05) :1704-1713
[2]   Logic circuits with carbon nanotube transistors [J].
Bachtold, A ;
Hadley, P ;
Nakanishi, T ;
Dekker, C .
SCIENCE, 2001, 294 (5545) :1317-1320
[3]   Engineering carbon nanotubes and nanotube circuits using electrical breakdown [J].
Collins, PC ;
Arnold, MS ;
Avouris, P .
SCIENCE, 2001, 292 (5517) :706-709
[4]   Carbon nanotube inter- and intramolecular logic gates [J].
Derycke, V ;
Martel, R ;
Appenzeller, J ;
Avouris, P .
NANO LETTERS, 2001, 1 (09) :453-456
[5]   Effect of the large current flow on the low-temperature transport properties in a bundle of single-walled carbon nanotubes [J].
Fuse, T ;
Moriyama, S ;
Suzuki, M ;
Aoyagi, Y ;
Ishibashi, K .
APPLIED PHYSICS LETTERS, 2003, 83 (18) :3803-3805
[6]   Growth of suspended carbon nanotube networks on 100-nm-scale silicon pillars [J].
Homma, Y ;
Kobayashi, Y ;
Ogino, T ;
Yamashita, T .
APPLIED PHYSICS LETTERS, 2002, 81 (12) :2261-2263
[7]   Fabrication of a single-electron inverter in multiwall carbon nanotubes [J].
Ishibashi, K ;
Tsuya, D ;
Suzuki, M ;
Aoyagi, Y .
APPLIED PHYSICS LETTERS, 2003, 82 (19) :3307-3309
[8]   Formation of coupled quantum dots in single-wall carbon nanotubes [J].
Ishibashi, K ;
Suzuki, M ;
Ida, T ;
Aoyagi, Y .
APPLIED PHYSICS LETTERS, 2001, 79 (12) :1864-1866
[9]   Single- and multi-wall carbon nanotube field-effect transistors [J].
Martel, R ;
Schmidt, T ;
Shea, HR ;
Hertel, T ;
Avouris, P .
APPLIED PHYSICS LETTERS, 1998, 73 (17) :2447-2449
[10]   Ambipolar electrical transport in semiconducting single-wall carbon nanotubes [J].
Martel, R ;
Derycke, V ;
Lavoie, C ;
Appenzeller, J ;
Chan, KK ;
Tersoff, J ;
Avouris, P .
PHYSICAL REVIEW LETTERS, 2001, 87 (25) :256805-1
12