Double-crystal x-ray diffraction from silicon film on insulator

被引：2

作者：

Zhong, L

Hayashi, K

Takeda, R

机构：

[1] Toshiba Ceramics, R. and D., Semiconductor Silicon Division, Hadano 257

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 09期

关键词：

D O I：

10.1063/1.117426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes a simple and straightforward approach to the thickness measurement of silicon film on insulator, whose double-crystal x-ray diffraction curve is found of a sinusoidal slit function,as predicted by the dynamical scattering theory. (C) 1996 American Institute of Physics.

引用

收藏

页码：1247 / 1249

页数：3

相关论文

共 14 条

[1]

COWLEY JM, 1984, DIFFRACTION PHYSICS

[2]

GOSELE U, 1995, APPL PHYS LETT, V67, P241, DOI 10.1063/1.114680

[3] NOVEL DIELECTRIC SILICON PLANAR STRUCTURES FORMED BY ION-BEAM SYNTHESIS [J].

HEMMENT, PLF ;

REESON, KJ ;

KILNER, JA ;

CHATER, RJ ;

MARSH, C ;

BOOKER, GR ;

DAVIS, JR ;

CELLER, GK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :129-133

[4]

HOVEL HJ, 1994, SILICON INSULATOR TE, P133

[5] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[6]

James R. W., 1948, OPTICAL PRINCIPLES D

[7] Optical thickness evaluation of separation by IMplanted OXygen (SIMOX) wafers [J].

Kajiyama, K ;

Morikawa, Y ;

Hamaguchi, I ;

Yano, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2A) :526-532

[8] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J].

MAEYAMA, S ;

KAJIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :744-751

[9] X-RAY ROCKING CURVE ANALYSIS OF SUPERLATTICES [J].

SPERIOSU, VS ;

VREELAND, T .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1591-1600

[10]

Sze S. M., 1981, PHYS SEMICONDUCTOR D, P67