Low-threshold narrow-linewidth InGaAs-GaAs ridge-waveguide DBR lasers with first-order surface gratings

被引:40
作者
Lammert, RM
Hughes, JS
Roh, SD
Osowski, ML
Jones, AM
Coleman, JJ
机构
[1] Microelectronics Laboratory, University of Illinois, Urbana
基金
美国国家科学基金会;
关键词
distributed Bragg reflector lasers; laser arrays; laser resonators; semiconductor lasers; wavelength division multiplexing;
D O I
10.1109/68.553068
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design and operation of InGaAs-GaAs ridge-waveguide distributed Bragg reflector (DBR) single quantum-well lasers with first-order surface gratings fabricated using only a single growth step are presented, Uncoated devices exhibit CW threshold currents as low as 6 mA with slope efficiencies of 0.46 W/A, By varying the period of the first-order DBR grating, a wavelength range of 540 Angstrom (similar to 15.2 THz) is obtained with the threshold currents and slope efficiencies remaining below 10 mA and above 0.40 W/A, respectively, over the entire wavelength range, High characteristic temperature, T-o. values of 450 K, as measured between T = 10 degrees C and 40 degrees C, are obtained for devices with Bragg wavelengths positively detuned from the peak gain wavelength, The spectral linewidth minimum of these devices is below 25 kHz, which is the resolution limit of the self-heterodyning system used to measure the spectral linewidth.
引用
收藏
页码:149 / 151
页数:3
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